| PART |
Description |
Maker |
| 1SS294 |
Small package Low forward voltage: VF(3) = 0.54 V(Typ).Low reverse current: IR = 5A(Max).
|
TY Semiconductor Co., Ltd
|
| BAS40T-06T |
Low Forward Voltage Drop, Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 1SV250 |
Small interterminal capacitance (C=0.23pF typ). Small forward series resistance (rs=4.5 max).
|
TY Semiconductor Co., Ltd
|
| GL561 GL560 |
Low Peak Forward Voltage Type Φ 5 Resin Mold Package Infrared Emitting Diodes
Low Peak Forward Voltage Type フ 5 Resin Mold Package Infrared Emitting Diodes
Low Peak Forward Voltage Type 5 Resin Mold Package Infrared Emitting Diodes
Low Peak Forward Voltage Type 5 Resin Mold Package Infrared Emitting Diodes
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LS33401111 LY3340-M LG3340 LG3340-KN LG3340-L LG33 |
T1(3mm) LED LAMP T1毫米）发光二极管
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| GBJ30B GBJ30G |
Low forward voltage, high forward current
|
GeneSiC Semiconductor, ...
|
| AP2605GY0-HF-16 |
Small Footprint & Low Profile Package
|
Advanced Power Electron...
|
