| PART |
Description |
Maker |
| SCS220AE2 SCS120AE2 SCS220AE2C |
Switching loss reduced, enabling high-speed switching . (3-pin package)
SiC Schottky Barrier Diode
|
ROHM
|
| VS-HFA50PA60CHN3 |
Reduced power loss in diode and switching transistor
|
Vishay Siliconix
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4890DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI6802DQ |
20-V (D-S) Single
N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SI4824DY |
Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR
ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
