| PART |
Description |
Maker |
| RJK0380DPA RJK0380DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5824 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET的：N沟道MOSFET的硅SBD智能交通：肖特基二极管通用开关器件应
Nch SBD
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| FCH08A15 |
SBD DUAL DIODES
|
ETC
|
| SF15SC4 |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type)
SCHOTTKY RECTIFIER (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| M1FH3 |
Schottky Rectifiers (SBD) / Single (Surface Mount)
SCHOTTKY RECIFIERS (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼?
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|
| CPH5831 |
Nch SBD
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
