| PART |
Description |
Maker |
| ECE-V1HA101UP RF3932SQ EEV-TG2A101M ERJ-8GEYJ100V |
60W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| GRM21BF51C106ZE15L GRM188R71H103KA01D 100A0R8BW150 |
30MHz TO 512MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| RF3826PCBA-411 RF3826TR7 |
30MHz TO 2500MHz, 9W GaN WIDEBAND
30MHz TO 2500MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
| MAGX-011086-SMBPPR |
GaN Wideband Transistor 28 V, 4 W
|
M/A-COM Technology Solu...
|
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
|
