| PART |
Description |
Maker |
| NE5550979A NE5550979A-T1 NE5550979A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
| NE5550779A NE5550779A-T1 NE5550779A-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
| NE5520379A |
3.2V Operation Silicon RF Power LDMOS FET
|
NEC
|
| NE552R479A NE552R479A-T1 NE552R479A-T1-A NE552R479 |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA211801E PTFA211801E-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXAC182002FC-V1 |
High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PXAC243502FV-V1 |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
|
Wolfspeed
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
