| PART |
Description |
Maker |
| KDD3670 |
34 A, 100 V. RDS( = 32m VGS = 10 V High power and current handling capability
|
TY Semiconductor Co., Ltd
|
| AO3414 KO3414 |
VDS (V) = 20V ID= 4.2A (VGS=4.5V) RDS(ON) 50m (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
| AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes
x8 Flash EEPROM
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
| FDS89161LZ |
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
|
Fairchild Semiconductor
|
| 2SK3377 |
Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3269 |
4.5 V drive available Low on-state resistance RDS(on)1 = 12 m MAX. (VGS= 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3366 |
Super low on-state resistance: RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3365 |
Super low on-state resistance: RDS(on)1 = 14 m MAX. (VGS = 10 V, ID = 15 A)
|
TY Semiconductor Co., Ltd
|
| 2SK3432 |
Super low on-state resistance: RDS(on)1 = 4.0m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
| AMS431 AMS431A AMS431AL AMS431AM AMS431AN AMS431AS |
PRECISION ADJUSTABLE SHUNT REGULATOR 精密可调并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):0.09ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:10A; On-Resistance, Rds(on):0.28ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-252; Leaded Process Compatible:No 精密可调并联稳压
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| 2SK3433 |
Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS= 10 V, ID = 42 A)
|
TY Semiconductor Co., L...
|
| KQB6N70 |
6.2A, 700 V. RDS(ON) = 1.5 VGS = 10 V Low gate charge (typical 130nC)
|
TY Semiconductor Co., Ltd
|
