| PART |
Description |
Maker |
| GM1015 |
Excellent HFE Linearity HFE : HFE(0.1mA)/HFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| HN1C07F |
Excellent Current Gain(hFE)linearity
|
TY Semiconductor Co., Ltd
|
| KST9014 |
Excellent hFE linearity Collector Current :IC=0.1A
|
TY Semiconductor Co., Ltd
|
| 2SC4003 |
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
|
TY Semiconductor Co., Ltd
|
| FCX789A |
2W power dissipation, Excellent HFE characteristics up to 10 Amps.
|
TY Semiconductor Co., Ltd
|
| KST9012 |
PNP Transistor
Excellent hFE liearity Collector Current :IC=-0.5A
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| C7884G-01 C3901 C390110 C8225-01 A8226 |
Current output, high UV sensitivity, excellent linearity, low power consumption
|
Hamamatsu Corporation
|
| 2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
| Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| SMP900G-JP |
PIN. Photodiode(Excellent Linearity，Low Noise，Widest Spectral Response,Enhanced UV Sensitivity)(PIN. 光电二极极好线性特性，低噪声，最宽谱响应，增强型UV传感特性）)
P.I.N. PHOTODIODE
|
Seme LAB
|
| SMP600G-EM |
PIN. Photodiode(Excellent Linearity，Low Noise，Wide Spectral Response,Enhanced UV Sensitivity)(PIN. 光电二极极好线性特性，低噪声，宽谱响应，增强型UV传感性能
P.I.N. PHOTODIODE
|
Semelab(Magnatec)
Seme LAB
|
