| PART |
Description |
Maker |
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| SST12LP10 SST12LP10-QVC SST12LP14A-QVCE-K SST12LP1 |
2.4 GHz High-Linearity Power Amplifier
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12LP15A-QVCE-K SST12LP15A SST12LP15A-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| LD7263 |
14 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN
14 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| CGD1044H |
1 GHz, 25 dB gain high output power doubler CGD1044H<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| CGD1042H09 |
1 GHz, 23 dB gain high output power doubler
1 GHz, 23 dB gain high output power doubler
|
NXP Semiconductors
|
| Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
6 - 20 GHz High Gain Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| HMMC-5620 |
6-20 GHz High-Gain Amplifier
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
