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ICE17N60 - N-Channel Enhancement Mode MOSFET

ICE17N60_7049030.PDF Datasheet


 Full text search : N-Channel Enhancement Mode MOSFET
 Product Description search : N-Channel Enhancement Mode MOSFET


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APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
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Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
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ADPOW[Advanced Power Technology]
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意法半导
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From old datasheet system
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STH15NA50 STH15NA50FI STW15NA50 STH15NA50_FI N-CHANNEL Power MOS MOSFET
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SD1107DD SD1107CHP SD1117DD SD1117CHP 100 V, 4 ohm, N-channel enhancement-mode D-MOS power FET
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APT1201R2SLL APT1201R2BLL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT8014L2LL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
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APT20M16LLL APT20M16B2LL Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
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