| PART |
Description |
Maker |
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics
Ecliptek, Corp.
Daishinku, Corp.
Electronic Theatre Controls, Inc.
飞思卡尔半导体(中国)有限公司
Pulse Engineering, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SGSP575 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
STMICROELECTRONICS
|
| FQU5N40TU FQD5N40 |
N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm
|
Fairchild Semiconductor
|
| 2N6760TXV |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
MICROSEMI CORP
|
| RFP8P10 |
8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
|
Intersil Corporation
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
| IRFW740BTMNL |
10 A, 400 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
| QJD0240002 |
Dual Power MOSFET Module (400 Amperes/200 Volts) 400 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| MTW16N40E |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
|
MOTOROLA[Motorola, Inc]
|
|
