| PART |
Description |
Maker |
| AT9019-10 |
SILICON ABRUPT JUNCTION TUNING VARACTOR 33 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| AT12020-21 |
SILICON ABRUPT VARACTOR DIODE 38 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| 1N5474 1N5448A 1N5443B 1N5447C 1N5445A 1N5476A JAN |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N4795A 1N4811A 1N4811B 1N4815 1N4797B |
39 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
56 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| AT12015-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| CVH2030-03-150-802 CVH2030-03-150-801 |
30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
| AT6022B-15 |
SILICON ABRUPT JUNCTION VARACTOR
Diode
|
ASI[Advanced Semiconductor]
|
| PC116C PC128 PG210C PG210B PC117 |
22 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
33 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| TX-GC1513-36 TX-GC1513-35 GC1513-88 TX-GC1513-85 |
X BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| EH74470 |
L BAND, 47 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| 1N5452B 1N5444A |
UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA
UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA
|
MOTOROLA INC
|
|
