| PART |
Description |
Maker |
| BL6464AA804 BL12864AA804 BL25664AA804 BL25664AA BL |
512MB / 1GB / 2GB (x64) UNBUFFERED DDR2 SDRAM DIMM
|
List of Unclassifed Manufacturers
ETC
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| PICO-APL3 PICO-APL3-A10-0001 |
Onboard DDR3L 2GB (Optional to 4GB)
|
AAEON Technology
|
| EBD11UD8ADDA-7B-E EBD11UD8ADDA-6B-E EBD11UD8ADDA-7 |
1GB DDR SDRAM SO-DIMM (128M words x64 bits, 2 Ranks)
|
ELPIDA MEMORY INC
ELPIDA[Elpida Memory]
Elpida Memory, Inc.
|
| S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册，瓦特/锁相环，FBGA封装
|
Murata Manufacturing Co., Ltd.
|
| HYMP325S64MP8 HYMP112S648 HYMP112S64P8 |
DDR2 SDRAM - SO DIMM 2GB
DDR2 SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册，瓦特/锁相环，葡萄多糖
|
Optrex America, Inc.
3M Company
|
| TS2GJFV15 |
2GB USB2.0 JetFlash垄芒V15
2GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| TS2GJF2A |
2GB USB2.0 JetFlash垄莽2A
2GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
