| PART |
Description |
Maker |
| N800210 |
CONTACT RESISTANCE; 50 m2 MAX INITIAL.
|
E-SWITCH
|
| DFE201610E-4R7M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201208S-2R2M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201208S-R47M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| 1239AS-H-3R3M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201210S-1R5M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201208S-1R0M |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| DFE201610P-R47M-18 |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
Murata Manufacturing Co...
|
| 7440430018 |
specification for release
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 68HC805P18 MC68HC805P18CDW MC68HC805P18CP MC68HC80 |
SPECIFICATION (General Release)
|
Freescale Semiconductor, Inc
|
| MC68HC08LN56 MC68HC708LN56 |
General Release Specification
|
Freescale Semiconductor, Inc
|