| PART |
Description |
Maker |
| 1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| 1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| AT12015-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| GVD1202-001 |
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
SPRAGUE-GOODMAN ELECTRONICS INC
|
| 1N5689A |
33 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| PC128C PG210C PC117A |
33 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
|
|
| DH71100-70T10 |
HF-S BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| AT12020-21 AT1202021 |
SILICON ABRUPT VARACTOR DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
|
| AT6019-10 AT6017-10 AT601910 |
From old datasheet system
SILICON ABRUPT JUNCTION TUNING VARACTOR
|
ASI[Advanced Semiconductor]
|
| KV30S8 |
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Voltronics, Corp.
|
| 1N5446A 1N5468A 1N5475ACHIP |
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
|
