| PART |
Description |
Maker |
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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Hamamatsu Photonics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
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Hamamatsu Photonics
|
| S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
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Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
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ST Microelectronics
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268 90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
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Intersil, Corp. Intersil Corporation
|
| STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
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ST Microelectronics
|
| PFR03S-334-G-1-T15 PFR03S-434-G-1-T15 PFR03S-104-G |
RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 330000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 430000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 100000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 110000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 130000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 150000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 160000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 180000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 200000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 220000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 240 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 2400 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 24000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 5 %, 300 ppm, 43 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 300000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 43000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 4700000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 750000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 560000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 360000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 470000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 47000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 120000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 680000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 240000 ohm, SURFACE MOUNT CHIP, ROHS COMPLIANT RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 4300000 ohm, SURFACE MOUNT CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 2 %, 200 ppm, 390000 ohm, SURFACE MOUNT CHIP
|
SUSUMU Co., Ltd.
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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