| PART |
Description |
Maker |
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| TP2640ND |
P-Channel Enhancement-Mode Vertical DMOS FETs 400 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex, Inc.
|
| GT10G101 |
10 A, 400 V, N-CHANNEL IGBT
|
|
| PTVS13VS1UR PTVS10VS1UR-115 TVS51VS1UR PTVS7V0S1UR |
400 W Transient Voltage Suppressor 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
NXP Semiconductors N.V.
|
| AD9953 AD9953PCB |
400 MSPS 14-Bit, 1.8V CMOS Direct Digital Synthesizer 400 MSPS4位，1.8V CMOS的直接数字频率合成器
|
Analog Devices, Inc.
|
| FQI5N40 FQB5N40 |
400V N-Channel MOSFET 4.5 A, 400 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| NGD8201N NGD8201NT4 |
Ignition IGBT 20 A, 400 V, N-Channel DPAK
|
ON Semiconductor
|
|
