| PART |
Description |
Maker |
| SFH4850E7800 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4556 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| SFH4555 |
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
|
OSRAM GmbH
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BT1074BI |
Single chip 850-950 MHz RF transeiver
SINGLE CHIP 850-950MHz RF TRANSCEIVER
From old datasheet system
|
BTI BethelTronix
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| SFH40903 SFH409 SFH409-2 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| SFH4271 |
IR-Lumineszenzdiode Infrared Emitter
|
OSRAM GmbH
|
| Q62703Q6175 Q62703Q1094 |
GaAlAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| Q62703Q0517 |
GaAIAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| SFH4203 |
Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter
|
OSRAM GmbH
|
| MCP6L92T-E_MS MCP6L92T-E_OT MCP6L92T-E_SL MCP6L92T |
10 MHz, 850 μA Op Amps
10 MHz, 850 楼矛A Op Amps
|
Microchip Technology
|
