| PART |
Description |
Maker |
| RJK03E5DPA-00-J5A RJK03E5DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0208DPA-00-J5A RJK0208DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0380DPA RJK0380DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0236DPA RJK0236DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| PU7457 PUB4753PU7457 |
PUB4753 (PU7457) - N-Channel Power F-MOS FET (with built-in zener diode)
Power Transistor Arrays (F-MOS FETs)
|
Matsshita / Panasonic
|
| AT73C203 |
Power Management IC for Datacom Platforms 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PBGA100
The AT73C203 is a low-cost, ultra low-power, power and battery management IC designed to interface directly with portable and hand-held applications built around microprocessors requiring smart power management functions. It includes all r
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| STA406 STA406A |
NPN Darlington With built-in avalanche diode 6 A, 70 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
SANKEN[Sanken electric]
|
| TDA756610 E-TDA7566 |
4 x 40 W multifunction quad power amplifier with built-in diagnostics features
60 W, 4 CHANNEL, AUDIO AMPLIFIER, ZFM25
|
STMicroelectronics
|
