| PART |
Description |
Maker |
| MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
| R50440TS |
300 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI CORP-COLORADO
|
| KSP44IUBU KSP44IUTA |
300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| T625 T6250430 T6250440 T6250630 T6250640 T6250830 |
Phase Control SCR (300-400 Amperes 1200 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| FSTH-38R |
300 / 400 MHz Band Chip 0 deg. Splitter / Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| T300/04 |
VDRM / VRRM (V) = 400-1800 IT(AV) (A) = 300 At TC (oC) = 85 Itsm (KA) = 7 RTH(J-C)Sin180 = 0.084 Case = Z
|
Usha Ltd.
|
| NTE6359 NTE6355 NTE6362 |
300 A, 1000 V, SILICON, RECTIFIER DIODE
300 A, 400 V, SILICON, RECTIFIER DIODE
300 A, 1400 V, SILICON, RECTIFIER DIODE
|
|
| APT40M70B2VFRG APT40M70LVFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-264 [L]; ID (A): 57; RDS(on) (Ohms): 0.07; BVDSS (V): 400; 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| SF164CS SF163CS SF165CS SF161CS SF166CS SF162CS |
GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes) 16 A, 300 V, SILICON, RECTIFIER DIODE
|
RECTRON[Rectron Semiconductor]
|
|
