| PART |
Description |
Maker |
| EIA1415A-4P |
14.0-15.35GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1415A-2P |
14.0-15.35GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1415-4P |
14.40-15.35GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
| EID1415A1-3 |
14.40-15.35GHz, 3-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| CHT3029-99F |
DC-35GHz 4 Bit Digital Attenuator
|
United Monolithic Semic...
|
| CHR2294 |
25-35GHz Single Side Band Mixer Self biased
|
United Monolithic Semiconductors
|
| MAFR-000050-5S4C1T MAFR-000159-5S4C1T MAFR-000200- |
Single Junction Surface Mount Circulator 2.4GHz, 2.6GHz, 3.35GHz, 3.5GHz
|
M/A-COM Technology Solutions, Inc.
|
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC42V4450A C424450A |
From old datasheet system
4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
