| PART |
Description |
Maker |
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK39V4045 K394045 |
14.0~14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
From old datasheet system
14.0-14.5GHz BAND 8W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V4045 K354045 |
14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK37V4045_97 MGFK37V4045 MGFK37V404597 |
14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7785A_04 MGFC39V7785A |
7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator
From old datasheet system
|
Linear Technology Corporation
|
| LT5572EUF LT5572 |
1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator
|
Linear Technology
|
