| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIA1314-4P |
13.75-14.5 GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| EID1112A1-5 |
11.70-12.70 GHz 5-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC7179-10 |
7.10-7.90 GHz 10-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC7179-12 |
7.10-7.90 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1112A1-8 |
11.70-12.70 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC39V5258 MGFC39V5258A |
5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| EID1314A1-8 |
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFK35V2732 |
12.7-13.2 GHz BAND 3W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| EIC2224-15 |
2.20- 2.40 GHz 15W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1212-4 |
12.20-12.70 GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
