| PART |
Description |
Maker |
| MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 1SS356 |
Diodes > High Frequency Diodes > Band switching diodes
|
Rohm
|
| BAV99BRLP BAV99BRLP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
SURFACE MOUNT SWITCHING DIODE ARRAY
|
Diodes Incorporated
|
| BAW101V-7 BAW101V BAW101V-15 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
HIGH VOLTAGE DUAL SWITCHING DIODE
|
Diodes Incorporated
|
| BAS116LPH4-7B BAS116LPH4 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
SURFACE MOUNT SWITCHING DIODE
|
Diodes Incorporated
|
| 1SS361LPH4 1SS361LPH4-7 1SS361LPH4-7B 1SS361LPH4-1 |
SURFACE MOUNT SWITCHING DIODE
Discrete - Diodes (Less than 0.5A) - Switching Diodes
|
Diodes Incorporated
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| BA682 BA683 |
Band-switching diodes
|
Guangdong Kexin Industrial Co.,Ltd
|
| BA782S-V BA783S-V |
Band Switching Diodes
|
Vishay Siliconix
|
| BA982 |
Band Switching Diodes
|
Vishay Siliconix
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
