| PART |
Description |
Maker |
| FDC855N |
30V Single N-Channel, Logic Level, PowerTrench MOSFET; Package: SSOT-6; No of Pins: 6; Container: Tape & Reel 6100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-193AA
Single N-Channel, Logic Level, PowerTrench㈢ MOSFET 30V, 6.1A, 27mヘ
Single N-Channel, Logic Level, PowerTrench? MOSFET 30V, 6.1A, 27mΩ
|
Fairchild Semiconductor, Corp.
|
| FDB6670S FDP6670S FDB6670SNL |
30V N-Channel PowerTrench SyncFET TM
30V N-Channel PowerTrench SyncFET TM
30V N-Channel PowerTrench? SyncFET
30V N-Channel PowerTrenchÒ SyncFET™
From old datasheet system
30V N-Channel PowerTrench SyncFET 62 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| FDB7030BLS FDP7030BLS FDB7030BLSL86Z |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
30V N-Channel PowerTrench?SyncFET
30V N-Channel PowerTrenchÒ SyncFET™
30V N-Channel PowerTrench㈢SyncFET⑩
30V N-Channel PowerTrench SyncFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FDC796N FDC796NNL |
30V N-Channel PowerTrench MOSFET Recommend FDC796N_F077 12.5 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
30V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDD6030L_03 FDD6030L FDD6030L03 FDD6030LNL |
30V N-Channel Logic PowerTrench MOSFET 50 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
30V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRHNB8Z60 IRHNB3Z60 IRHNB4Z60 IRHNB7Z60 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| S12NF30L STS12NF30L STS12NF30L_07 STS12NF30L07 -S1 |
30V N-Channel PowerTrench MOSFET
N-channel 30V - 0.008ohm - 12A SO-8 STripFET II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB3020L 6474 |
CSED, FLANGE KIT 400A -通道30V 0.019ohm - 40A采用D2PAK STripFET]功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - D 2 PAK STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET
N - CHANNEL 30V - 0.019W - 40A - D 2 PAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| E142-SERIES M342-SERIES T242-SERIES X242-SERIES E2 |
Transient Voltage Suppressor Diodes
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3910 with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7862PBF with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2203NS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB260N with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9410 with Standard Packaging
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU12N25D with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR4343 with Standard Packaging
Peripheral IC 外围芯片
|
Bourns, Inc.
Hoffman
TOKO, Inc.
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| FDB887010 FDB8870F085 FDB8870-F085 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30V, 160A, 3.9mΩ
|
Fairchild Semiconductor
|
