| PART |
Description |
Maker |
| ACS758LCB-100B-PFF-T ACS758LCB-050B-PFF-T ACS758EC |
Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 μΩ Current Conductor
Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 楼矛楼? Current Conductor
|
Allegro MicroSystems
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| PTVA104501EH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PPC440EP-3UC667C PPC440EP-3TC667C PPC440EP-3UC667C |
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, ROHS COMPLIANT, THERMALLY ENHANCED, PLASTIC, BGA-456
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, THERMALLY ENHANCED, PLASTIC, BGA-456
|
Applied Micro Circuits, Corp.
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFA240451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
|
Infineon Technologies AG
|
| PTFA091201HL PTFA091201GL |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??960 MHz
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz
|
Infineon Technologies AG
|
