| PART |
Description |
Maker |
| SIHFZ48RS-E3 SIHFZ48RL-E3 SIHFZ48RS-GE3 |
50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB ROHS COMPLIANT, TO-263, D2PAK-3
50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA ROHS COMPLIANT, TO-262, I2PAK-3
Power MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| BUK7618-55/T3 |
57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| FQP45N03L |
41 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STD45NF75 STD45NF75T4 |
N-CHANNEL 75V - 0.018 OHM -40A DPAK STRIPFET II POWER MOSFET
|
ST Microelectronics
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTP50N06EL MTP50N06 |
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| C67078-S3120-A4 BUZ346S2 SIEMENSAG-BUZ346S2 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 58 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTW33N10E ON2695 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
|
