| PART |
Description |
Maker |
| LB135DS01 |
135.42MHz Low-Loss SAWF 8MHz Bandwidth 135.42MHz低损耗声表面波滤波器带宽MHz
|
SIPAT Co., Ltd.
SIPAT Co,Ltd
|
| RA08N1317M10 RA08N1317M-101 |
135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| M67741L 67741L M67741 |
RF POWER MODULE 135-160MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
135-160MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STFI26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in I2PAKFP package
N-channel 600 V, 0.135, 20 A MDmesh II Power MOSFET in PAKFP package
|
ST Microelectronics
STMicroelectronics
|
| 1630270000 |
SL 5.00/4/135 3.2SN OR
|
Weidmuller
|
| DS1992L-E00 |
(135.97 k) 35.97十一
|
Cirrus Logic, Inc.
|
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| FQD17P06 |
P-Channel QFET? MOSFET -60 V, -12 A, 135 mΩ
|
Fairchild Semiconductor
|
| ST083S12MFH0 ST083S12MFK0 |
135 A, 1200 V, SCR, TO-209AC
|
VISHAY SEMICONDUCTORS
|
