| PART |
Description |
Maker |
| M48Z512Y-120PL1NBSP M48Z512Y-120PL1 |
NVRAM (Battery Based)
From old datasheet system
|
ST Microelectronics
|
| DS1245ABL-120 DS1245ABL-120-IND DS1245YL-120-IND D |
NVRAM (Battery Based) NVRAM中（基于电池
|
Abracon, Corp.
|
| FM25040-C FM25040-PS |
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International, Corp.
|
| DS1230AB-150-IND DS1230Y-150-IND DS1230Y-70-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Epson ToYoCom, Corp.
Maxim Integrated Products, Inc.
|
| DS1650Y-70-IND DS1650Y-100-IND DS1650Y-85-IND DS16 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Bourns, Inc.
Maxim Integrated Products, Inc.
|
| DS1275 DS1270Y-70-IND DS1270Y-100-IND DS1270AB-70- |
NVRAM (Battery Based) NVRAM中（基于电池
IC,LINE TRANSCEIVER,CMOS,1 DRIVER,1 RCVR,DIP,8PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| M41ST87YMX6F |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M41ST87W M41ST87WMX6F M41ST87Y M41ST87YSS6F M41ST8 |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| M41T56C64MY6F M41T56C64 M41T56C64MY6E |
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM(56 bytes NVRAM4 Kbit (8192 bit x 8) EEPROM的串行实时时
Serial Real Time Clock with 56 bytes of NVRAM 64 Kbit (8192 bit x 8) EEPROM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| M68HC711CFD M68HC711CFG M68HC711CFG_D M68HC711CFG/ |
CONFIG Register Programming for EEPROM-based M68HC11 Microcontrollers
CONFIG REGISTER PROGRAMMING FOR EEPROM-BASED MHC MICROCONTROLLERS
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Freescale (Motorola)
|
