| PART |
Description |
Maker |
| IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| T308N20TOC |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Eupec Power Semiconductors
|
| T308N2000TOF |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Telefunken Electronic
|
| HT1000/08OJ6 |
800V V[drm] Max., 980A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| HD-0125M3-GH HD-0155M3-IH HD-0195M3-DH HD-0195M3-D |
Stick Coupler
3 dB 90° Card Couplers
3 dB 90∑ Card Couplers
3 dB 90 Card Couplers
SCR-600VRM 10A
Bridge Rectifier; Repetitive Reverse Voltage Max, Vrrm:100V; Package/Case:TO-202; Current Rating:4A; Mounting Type:Through Hole
3 dB 90Card Couplers 3分贝90Σ卡耦合
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:100V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA 3分贝90Σ卡耦合
3 dB 90??Card Couplers
3 dB 90?Card Couplers
|
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
HIROSE[Hirose Electric]
|
| UPD23C64040ALGY-XXX-MK UPD23C64040ALGY-XXX-MJ |
HiRel Silicon Diodes; Package: --; Package: -; IF (max): -; VBR (min): -; rF (typ): -; CT (max): -
x8 or x16 ROM (Mask Programmable) x8或x16光盘（掩模可编程
|
NEC, Corp.
|
| PA50 |
Amplifiers - Apex Linear Op-Amp, 100V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| FAN2500_FAN2501 FAN2501S25 FAN2501S28 FAN2500X25 F |
Pch Power MOSFET; ; Package: TPS; R DS On (Ω): (max 0.2) (max 0.12); I_S (A): (max -5)
Pch Power MOSFET; Surface Mount Type: N; Package: PW-MINI; R DS On (Ω): (max 0.76) (max 0.45); I_S (A): (max -2)
From old datasheet system
100 mA CMOS LDO Regulators
|
Fairchild Semiconductor
|
| IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
| CDSQR4448S-HF |
Halogen Free Switching Diodes, V-RRM=100V, V-R=100V, P-D=125mW, I-F=150mA
|
Comchip Technology
|
| GS-D500A |
100V/5A STEP AND MICROSTEP DRIVE BOARD FOR STEPPER MOTORS 100V/5A STEP和微步驱动板步进电机
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
