| PART |
Description |
Maker |
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| NCP1050ST100 NCP1050ST44 NCP1052P136 NCP1050/D NCP |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
2 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDSO4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 2 A SWITCHING REGULATOR, 154 kHz SWITCHING FREQ-MAX, PDIP8
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 24字符X2行，5X7点矩阵字符和光标
|
ON Semiconductor
|
| 2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http://
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MP4401 E002512 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| MP4401 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS / HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
|
Toshiba Semiconductor
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
