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KMM5362205C2W - 2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

KMM5362205C2W_6972657.PDF Datasheet


Part No.	KMM5362205C2W
Description	2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
File Size	287.52K / 17 Page
Maker	Samsung Semiconductor
Homepage	http://www.samsung.com/Products/Semiconductor/
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Full text search : 2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

Product Description search : 2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo

Related Part Number

PART	Description	Maker
KMM5322200C2W	2MBx32 DRAM Simm Using 1MBx16	Samsung Semiconductor
KMM5361205C2W	1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo	Samsung Semiconductor
KMM5364005CSW KMM5364005CSWG	4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4	SAMSUNG[Samsung semiconductor]
KMM5321200C2W	1M x 32 DRAM SIMM	Samsung Semiconductor
KMM5361203C2W	1M x 36 DRAM SIMM(1M x 36 动RAM模块)	SAMSUNG SEMICONDUCTOR CO. LTD.
KMM53216004CK	16MBx32 DRAM Simm Using 16MBx4	Samsung Semiconductor
KMM5362000BH	2M x 36 DRAM SIMM Memory Module	Samsung Electronics
KMM5324004BSW	4MBx32 DRAM Simm Using 4MBx16	Samsung Semiconductor
KMM5324000BSWG KMM5328000BSW KMM5324000BSW	4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V	SAMSUNG[Samsung semiconductor]
KMM5364005BSW	4M x 36 DRAM SIMM(4M x 36 动RAM模块) 4米36的DRAM上海药物研究所米36动态内存模块）	Samsung Semiconductor Co., Ltd.
KMM5321200C2W KMM5321200C2WG	1Mx32 DRAM SIMM (1MX16 Base)	Samsung semiconductor
CL001E08325B0DJ-60 20084C	8M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72	Fox Electronics

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