| PART |
Description |
Maker |
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| FS50UM-06 |
Bench Power Supply; Output Voltage:13.8VDC; Output Current:12A; Output Power Max:400W; Number of Outputs:1; Calibrated:No; Features:Constant voltage, reverse polarity, thermal & short-circuit protection
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| IXTY05N100 IXTU05N100 |
High Voltage Power MOSFET
|
IXYS Corporation
|
| IXTF1N450 |
High Voltage Power MOSFET
|
IXYS Corporation
|
| FS4UM-12 FS1KM-16A FS20UM-6 |
Power MOSFETs: FS Series, Medium Voltage, 600V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| MTH15N40 |
High Voltage Power MOSFET N-Channel
|
Semiconductor Technology
|
| GFCG50 |
N Channel high voltage, Power MOSFET
|
Gunter Seniconductor GmbH.
|
| SPD04N80C3 SPD04N80C308 |
4 A, 800 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| APT8030JVFR_05 APT8030JVFR APT8030JVFR05 |
25 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
