| PART |
Description |
Maker |
| CNS7106 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| CNS7108 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| Q347B |
Q347B Millimeter-Wave Noise Source, Q-band
|
Agilent (Hewlett-Packard)
|
| NW100M-M |
NOISE SOURCE, 0.1-100MHz, -67dBm/Hz, 107dB, 13dBm, PANEL MOUNT
|
Noisewave, Corp.
|
| ADR433ARMZ ADR430ARZ ADR430ARZ-REEL7 ADR430ARMZ AD |
Ultralow Noise XFET Voltage References ith Current Sink and Source Capability
|
Analog Devices
|
| V54C316162V-6 V54C316162V-55 V54C316162V-7 |
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAMX 512Kbit × 16
MORAY EEL 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAM组X 512Kbit × 16
200/183/166/143 MHz 3.3 VOLT/ 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
|
Mosel Vitelic, Corp.
Macronix International Co., Ltd.
Mosel Vitelic Corp
|
| D1217UK D1217 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D1203UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(30W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应30W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| ADR445ARMZ-REEL7 ADR441BRZ ADR440ARMZ-REEL7 |
Ultralow Noise, LDO XFET Voltage References with Current Sink and Source 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO8
Ultralow Noise, LDO XFET Voltage References with Current Sink and Source 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8
Ultralow Noise, LDO XFET Voltage References with Current Sink and Source 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO8
|
Analog Devices, Inc.
|
| D1022UK D1022 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
