| PART |
Description |
Maker |
| BSS73DCSM BSS73DCSM-JQR-A BSS73DCSM-JQR-AG4 |
Dual Bipolar NPN Devices in a hermetically sealed
500 mA, 300 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB
|
Seme LAB
SEMELAB LTD
|
| MMBTA42LT1 |
300 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Rectron Semiconductor
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| DDA114EU DDA114EU-7 DDA114TU DDA114TU-7 DDA114YU D |
PNP PRE-BIASED SMALL SIGNAL SOT-63 DUAL SURFACE MOUNT TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
CONN, 300 PIN PLUG, 0.05 X 0.05 IN. CENTERLINES, MEG-ARRAY, UL REQUIRED 30 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
CONN, PLUG, .050 IN, MEG-ARRAY, 300 X
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| DN030E |
300 mA, NPN silicon transistor
|
AUK Corp
|
| SDT14304 |
5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| BUL26 |
4 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-251
|
STMICROELECTRONICS
|
| A42-BP |
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
MICRO COMMERCIAL COMPONENTS
|
| SHD431104 |
300 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
SENSITRON SEMICONDUCTOR
|
|
