| PART |
Description |
Maker |
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| SMP6LC24-2P-T7 SMP6LC05-2P-T7 SMP6LC15-2P-T7 SMP6L |
3600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE SOP-16
|
ProTek Devices
|
| B49410B2366Q000 |
Single cell 3600 F/ 2.5 V
|
EPCOS[EPCOS]
|
| RA203600A |
General Purpose Rectifier (3600 Amperes Average 2400 Volts)
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| SM3436-47L |
3400-3600 MHz 50 Watt Ultra Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| SKNA202 SKNA202_36 SKNA202_40 SKNA202_42 SKNA202_4 |
Avalanche Diode 200 A, 4600 V, SILICON, RECTIFIER DIODE
Avalanche Diode 200 A, 3600 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| 2SK3482 |
Super low on-state resistance: RDS(on)1 = 33m MAX.Low Ciss: Ciss = 3600 pF TYP.
|
TY Semiconductor Co., Ltd
|
| 2SC3295 |
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.
|
TY Semiconductor Co., L...
|
| R9G20215AS R9G20415AS R9G20615AS R9G20815AS R9G212 |
200V, 1500A fast recovery single diode
400V, 1500A fast recovery single diode
600V, 1500A fast recovery single diode
800V, 1500A fast recovery single diode
Fast Recovery Rectifier (1500 Amperes Average 3600 Volts)
|
Powerex Power Semiconductors
|
|
