PART |
Description |
Maker |
IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
2SA1611 |
High DC Current Gain. High Voltage.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
2SC3072 |
High DC current gain. Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... 50W High Linearity Low Noise Wideband Gain Block From old datasheet system Gain Block Amplifiers
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
2STF2220 |
High Gain Low Voltage PNP Power Transistor
|
STMICROELECTRONICS[STMicroelectronics]
|
AGB3303S24Q1 AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... 50 OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A) High-current Gain MediumPower Transistor (20V, 0.5A) High-current Gain Medium Power Transistor (20V,0.5A) From old datasheet system
|
Rohm CO.,LTD. ROHM[Rohm]
|