| PART |
Description |
Maker |
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT25GP120BDQ1 APT25GP120BDQ1G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP60BDQ1 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
| APT35GP120B2DQ2 APT35GP120B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT30GP60BG APT30GP60S |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP90B |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT45GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT75GP120JDQ3 |
POWER MOS 7 IGBT IGBT的功率MOS 7
|
Advanced Power Technology, Ltd.
|
| APT65GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT75GP120B2 |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
