| PART |
Description |
Maker |
| RJK0204DPA-00-J5A RJK0204DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0213DPA-00-J5A RJK0213DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH5823 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| D4SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| MB40568 MB40568PF MB40568P-SK |
A/D Converter (1-channel, 8-bit low-power model with built-in clamp circuit)
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| MB40568PF MB40568P-SK |
A/D Converter (1-channel, 8-bit low-power model with built-in clamp circuit)
|
Fujitsu Limited
Fujitsu Component Limited.
|
| PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
