| PART |
Description |
Maker |
| MPS2222RLRPG MPS2222AG MPS2222ARLG MPS2222ARLRAG M |
General Purpose Transistors
Small Signal General Purpose NPN; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors
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ON Semiconductor
|
| EC30AL32-5.36MH EC30AL30-1.87MH EC30AL31-3.83MH EC |
1 ELEMENT, 5360 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1870 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3830 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4020 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3240 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1430000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 118000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2490 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 53600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 19600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 24300 uH, GENERAL PURPOSE INDUCTOR
|
|
| 2N4403ZL1 2N4403RLRP 2N4403RLRM 2N4403RL 2N4403RLR |
General Purpose Transistors 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors, PNP Silicon
|
ON Semiconductor
|
| BCX52 BCX51 BCX53 BCX53-16 BCX53-10 BCX51-10 BCX51 |
General Purpose Transistors - SOT89; VCEO=60V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=45V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=45V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160
PNP SILICON AF TRANSISTORS
|
INFINEON[Infineon Technologies AG]
|
| PS27-30 PS28-D-40 PS28-D-31 PS28-D-13 PS28-D-16 P9 |
1 ELEMENT, 1500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 860000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 300000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 400000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 43000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 20000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
Yageo, Corp.
|
| MSC82304 2764 |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS PRELIMINARY GENERAL PURPOSE AMPLIFIER APPLICATIONS
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
|
| AL0410S470M-S-A AL0204AT3R3J-S-B AL0410S470M-S-B-N |
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 330 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1.5 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 0.47 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 680 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 560 uH, GENERAL PURPOSE INDUCTOR
|
YAGEO CORP
|
| 2N3904RL1 2N3904 2N3903RLRM 2N3904ZL1 2N3903 2N390 |
General Purpose Transistors NPN Silicon
General Purpose Transistors(NPN Silicon)
; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Storage
|
ONSEMI[ON Semiconductor]
|
| BC848CDXV6T5 BC847CDXV6T1 BC847CDXV6T5 BC848CDXV6T |
General Purpose NPN Transistor
Dual General Purpose Transistors
|
ONSEMI[ON Semiconductor]
|
| R7S00208 R7S00408 R7S00608 R7S00808 R7S01008 R7S01 |
200V, 800A general purpose single diode
400V, 800A general purpose single diode
600V, 800A general purpose single diode
800V, 800A general purpose single diode
1000V, 800A general purpose single diode
1200V, 800A general purpose single diode
1400V, 800A general purpose single diode
1600V, 800A general purpose single diode
1800V, 800A general purpose single diode
2000V, 800A general purpose single diode
2200V, 800A general purpose single diode
|
Powerex Power Semiconductors
|
| 2SB1694 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
General purpose amplification (-30V, -1A)
General purpose amplification (−30V −1A)
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ROHM[Rohm]
|
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