| PART |
Description |
Maker |
| FT27C512R-90KM |
64K X 8 UVPROM, 90 ns, CQCC32
|
FORCE TECHNOLOGIES LTD
|
| M27V512-100K1TR M27V512-150F1 M27V512-200F1 |
64K X 8 OTPROM, 100 ns, PQCC32
64K X 8 UVPROM, 150 ns, CDIP28
64K X 8 UVPROM, 200 ns, CDIP28
|
STMICROELECTRONICS
|
| AT27C1024-70DC |
64K X 16 UVPROM, 70 ns, CDIP40
|
ATMEL CORP
|
| IS27LV512-12CWI |
64K X 8 UVPROM, 120 ns, CDIP28
|
INTEGRATED SILICON SOLUTION INC
|
| 27C1024MQB/C10 |
64K X 16 UVPROM, 100 ns, CDIP40
|
|
| X28HC256E-70T1 X28HC256EI-15T1 X28HC256E-12T1 X28H |
32K X 8 EEPROM 5V, 70 ns, CQCC32 CERAMIC, LCC-32
32K X 8 EEPROM 5V, 150 ns, CQCC32 CERAMIC, LCC-32
32K X 8 EEPROM 5V, 120 ns, CQCC32 CERAMIC, LCC-32
32K X 8 EEPROM 5V, 90 ns, CQCC32 CERAMIC, LCC-32
|
Ricoh Co., Ltd.
Intersil, Corp.
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| MBM27C1001-15Z MBM27C1001-15TV |
128K X 8 UVPROM, 150 ns, CDIP32
128K X 8 UVPROM, 150 ns, CQCC36
|
|
| CY7C09289 CY7C09289-9AI CY7C09289-9AC CY7C09389-9A |
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 64K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
DIODE SCHOTTKY SINGLE 75V 200mW 0.45V-vf 150mA-IFM 10mA-IF 5uA-IR SOD-123 3K/REEL 32K X 18 DUAL-PORT SRAM, 18 ns, PQFP100
0.1UF 50V 10% 0805 X7R CERAMIC CAPACITOR 32K X 18 DUAL-PORT SRAM, 20 ns, PQFP100
32K/64K X 16/18 Synchronous Dual Port Static RAM 32K X 16 DUAL-PORT SRAM, 18 ns, PQFP100
(CY7C09279 - CY7C09289) 32K/64K X 16/18 Synchronous Dual Port Static RAM
True dual-ported memory cells which allow simultaneous access of the same memory location
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| X28C513JI-12T2C7345 X28C513EM-12C7309 X28C512J-15T |
5V, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC 64K X 8 EEPROM 5V, 120 ns, PQCC32
5V, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 64K X 8 EEPROM 5V, 120 ns, PQCC32
5V, Byte Alterable EEPROM; Temperature Range: -55°C to 125°C; Package: 32-CLCC 64K X 8 EEPROM 5V, 120 ns, CQCC32
5V, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC T&R 64K X 8 EEPROM 5V, 150 ns, PQCC32
5V, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 32-PLCC 64K X 8 EEPROM 5V, 150 ns, PQCC32
|
Intersil, Corp.
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
|
