| PART |
Description |
Maker |
| MMBTA42LT1 |
300 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Rectron Semiconductor
|
| SDT14304 |
5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| QM300HA-24 |
300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| MJE13002 |
1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126
NPN SILICON POWER TRANSISTOR
|
UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
|
| KSC2330YNBU KSC2330YTA KSC2330YH2TA KSC2330ONBU |
100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR TO-92L, 3 PIN
NPN Epitaxial Silicon Transistor; Package: TO-92L; No of Pins: 3; Container: Ammo 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
0.3 A, 300 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| KSC1507OJ69Z |
0.2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220 TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| 2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368
FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| ZTX849SMTA X957SMTA FXT704STOA |
5 A, 30 V, NPN, Si, POWER TRANSISTOR
1 A, 300 V, PNP, Si, POWER TRANSISTOR
1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ZETEX PLC
DIODES INC
|
|
