| PART |
Description |
Maker |
| 1S922 1S923 1S923TR 1S922TR |
Small Signal Diode 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35
High Conductance Fast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| D83C D13-1C D13-3C D13-2C D14-2C D14-1C D14-3C D10 |
Single-In-Line
DIODE NETWORKS D SERIES
0.1 A, 5 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 7 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 13 ELEMENT, SILICON, SIGNAL DIODE
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
|
BI TECHNOLOGIES CORP
|
| 1N4454UR-1 JANTX1N4454UR-1 JANTXV1N4454UR-1 JAN1N4 |
Signal or Computer Diode
MINI-MELF-SMD Silicon Swithching Diode 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 1N3647 1N5182 1N4257 1N3643 1N4254 JANTXV1N3647 1N |
HIGH VOLTAGE RECTIFIERS 0.25 A, SILICON, SIGNAL DIODE
CAP 1.0PF 50V /-0.25PF NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR 0.25 A, SILICON, SIGNAL DIODE
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| RL153G-F 1N4007GH05 1N4007GH03-2 1N4005GH08 |
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| BYM05-100 BYM05-600 BYM05-400 |
0.5 A, 100 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
0.5 A, 400 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc.
Vishay Beyschlag
|
| RL205M12 1N5395M12 1A6-J RL1N4001-N RECTRONLTD-1A1 |
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 50 V, SILICON, SIGNAL DIODE
2.5 A, 100 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
|
| RS0115B SPD0801SMS SPD0801SMSS SPD1001SMSS SPD0901 |
SCHOTTKY RECTIFIER
1 AMPS 80-100 VOLTS SCHOTTKY RECTIFER
1 A, 80 V, SILICON, SIGNAL DIODE
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 90 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| EGF1T-HE3 |
DIODE 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-214BA, LEAD FREE, PLASTIC, GF1, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| BAQ335-GS08 |
DIODE 0.2 A, 140 V, SILICON, SIGNAL DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2, Signal Diode
|
Vishay Semiconductors
|
|
