| PART |
Description |
Maker |
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| EBE52UD6AFSA-6E-E EBE52UD6AFSA EBE52UD6AFSA-4A-E E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
ELPIDA[Elpida Memory]
|
| EBE51ED8AEFA-6E-E EBE51ED8AEFA-6 |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51UD8ABFA-5C-E EBE51UD8ABFA EBE51UD8ABFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| SSTUA32866EC SSTUA32866EC-G SSTUA32866 |
1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-667 RDIMM applications
|
PHILIPS[Philips Semiconductors]
|
| SSTUA32866 SSTUA32866EC SSTUA32866EC_G SSTUA32866E |
1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-667 RDIMM applications
|
NXP Semiconductors
|
| KVR133X64C3/512 |
512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
|
Kingston Technology
|
| W3H64M72E-667ES W3H64M72E-667ESI W3H64M72E-400ESI |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 64米72 DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Fujitsu, Ltd.
|
| EBE51UD8ABFV EBE51UD8ABFV-AE-E EBE51UD8ABFV-BE-E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
|
Elpida Memory
|
| IMB100VGGA 593836A0030E |
2 DDR2-533/667/800 DIMM support up to 2GB
|
Axiomtek Co., Ltd.
|
| HYB39S512400AT HYB39S512400ATL HYB39S512XX0ATL HYB |
SDRAM Components - 512Mb (64M x 8) PC133 3-3-3
SDRAM Components - 512Mb (128M x 4) PC133 3-3-3
SDRAM Components - 512Mb (32M x 16) PC133 3-3-3
512-Mbit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
