PART |
Description |
Maker |
LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components Sharp Corporation
|
IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
WS1M32V-17G3I WS1M32V-17G3IA WS1M32V-20G3I |
1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM3.3模块 1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM.3模块
|
Unisonic Technologies Co., Ltd. Electronic Theatre Controls, Inc. Microsemi, Corp.
|
TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) From old datasheet system TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
W7G21M32SVX120BNI W7G21M32SVX90BNC W7G21M32SVX90BN |
8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module 32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块) x72 SDRAM Module x72内存模块 32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块)
|
IBM Microeletronics DB Lectro, Inc. International Business Machines, Corp.
|
TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
MX25L3235DZNI-10G MX25L3235D MX25L3235DM2I-10G MX2 |
32M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
|
Macronix International
|
MX29L3222 29L3222 |
32M-BIT [2M x 16/1M x 32] CMOS From old datasheet system
|
Macronix 旺宏
|
MX25L3205A MX25L3205AMI-20 |
32M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY
|
Macronix International
|
KM23S32000D KM23S32000DTY KM23V32000DTY KM23V32000 |
(KM23x32000xTY) 32M-Bit CMOS Mask ROM
|
Samsung Semiconductor
|