| PART |
Description |
Maker |
| HDM160GS16 |
160 X 160 Dots Graphic, Low Power w/Touch Screen
|
HANTRONIX[Hantronix,Inc]
|
| WG160160A |
LCD MODULE GRAPHIC 160 x 160 DOTS
|
WINSTAR
List of Unclassifed Manufacturers
|
| LCD160G160A |
160 x 160 Dots Graphic LCD
|
Vishay Intertechnology
|
| LCD-160G160A08 |
160 x 160 Dots Graphic LCD
|
Vishay Siliconix
|
| VDSL6100I |
TVS 400W 45V UNIDIRECT SMA
Integrated LR EoVDSL Modem-on-Chip
|
INFINEON[Infineon Technologies AG]
|
| 156CMQ200-G |
160 A, SILICON, RECTIFIER DIODE, TO-249
|
SENSITRON SEMICONDUCTOR
|
| CC610816 CC610816A CD610816 CD610816A CN610816 CN6 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts 260 A, 1400 V, SILICON, RECTIFIER DIODE
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts 165 A, 1600 V, SILICON, RECTIFIER DIODE
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts 165 A, 1200 V, SILICON, RECTIFIER DIODE
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts
|
Powerex Power Semicondu...
Powerex, Inc.
Powerex Powers
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| IN3265 R-IN3275 IN3260 IN3260R IN3261 IN3261R IN32 |
1600V, 160A general purpose single diode
General Purpose Rectifier
RECTIFIER DIODE, 1.2KV V(RRM), DO-9 160 A, 1200 V, SILICON, RECTIFIER DIODE
RECTIFIER DIODE, 400V V(RRM), DO-9 160 A, 400 V, SILICON, RECTIFIER DIODE
1400V, 160A general purpose single diode
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Powerex Power Semicondu...
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| IRS2118SPBF |
Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status: Remarks:
|
International Rectifier
|
