| PART |
Description |
Maker |
| APT40M35JVFR |
93 A, 400 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
ADPOW[Advanced Power Technology]
|
| SIA421DJ-T1-E3 |
12 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| ITF87012SVT |
6A/ 20V/ 0.035 Ohm/ N-Channel/ 2.5V Specified Power MOSFET
6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| PHP37N06LT PHD37N06LT PHB37N06LT PHP37N06 |
TrenchMOS transistor Logic level FET 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STRH100N10FSY302 STRH100N10FSY301 |
48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
|
ST Microelectronics
|
| STRH100N10FSY01 STRH100N10FSY02 STRH100N10FSY1 |
48 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA ROHS COMPLIANT, HERMETIC SEALED PACKAGE-3
|
ST Microelectronics
|
| PHN603S_2 PHN603S118 PHN603S |
TrenchMOS/Schottky diode array Three phase brushless d.c. motor driver
From old datasheet system
5.5 A, 25 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AD
|
Philips
NXP SEMICONDUCTORS
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT4014BVFR APT4014SVFR APT4014BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 28; RDS(on) (Ohms): 0.14; BVDSS (V): 400; 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V FREDFET
|
Microsemi, Corp.
Advanced Power Technology
http://
|
| NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics
Ecliptek, Corp.
Daishinku, Corp.
Electronic Theatre Controls, Inc.
飞思卡尔半导体(中国)有限公司
Pulse Engineering, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| APT40M35PVR |
POWER MOS V 400V 89A 0.035 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
|
