| PART |
Description |
Maker |
| AN509 |
INFLUENCE OF GATE AND BASE DRIVE ON POWER SWITCH BEHAVIOUR
|
SGS Thomson Microelectronics
|
| MX98745 |
100 BASE-TX/FX Repeater Controller(100 BASE-TX/FX 中继器控制器) 8 CHANNEL(S), 100M bps, LOCAL AREA NETWORK CONTROLLER, PQFP16
|
Macronix International Co., Ltd.
|
| MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| TC4458EJD TC4457COE TC4488COE TC4489EJD TC4488EPD |
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, CDIP14
1.2 A 4 CHANNEL, NAND GATE BASED MOSFET DRIVER, PDSO16
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, PDSO16
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, PDIP14
|
|
| UCC21540 UCC21540DW UCC21540DWK UCC21540DWKR UCC21 |
<font color=red>[Old version datasheet]</font> UCC21541 Reinforced Isolation Dual-Channel Gate Driver with 3.3mm Channel-to-Channel Spacing Option
|
TI store
|
| EPG4011J-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
| EPE6267S |
8 -channel-10 Base T Interface Module
|
PCA ELECTRONICS INC.
|
| G1PM109N1-LF G1PM109N1LF |
Compliant with IEEE 802.3ab standard for 1000 BASE-T
2.5G/5G BASE?T SINGLE PORT
|
Bothhand USA, LP.
|
| STL22NF10 |
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLATLOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT LOW GATE CHARGE STripFET II MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ II MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| EPG4013S-RC EPG4013S-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
1000Base-T Module
|
Samsung Semiconductor Co., Ltd.
PCA ELECTRONICS INC.
|
