| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS（on）\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS
|
ON Semiconductor
|
| MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
|
ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTM50N05E MTM50N05 |
TMOS IV POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
