| PART |
Description |
Maker |
| K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| M2V28S20TP-8 M2V28S40TP-8 M2V28S30TP-8 M2V28S20TP- |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V28S40ATP-8L M2V28S20ATP M2V28S20ATP-6 M2V28S20A |
128M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD45128163G5-A10-9JF UPD45128163G5-A75A-9JF UPD45 |
128M-BIT SYNCHRONOUS DRAM 4-BANK, LVTTL
|
ELPIDA[Elpida Memory]
|
| PD45128163 PD45128163G5-A10-9JF PD45128163G5-A75-9 |
128M-bit Synchronous DRAM 4-bank, LVTTL
128M-bit Synchronous DRAM 4-bank LVTTL
|
ELPIDA[Elpida Memory]
|
| P2S28D30CTP P2S28D40CTP |
(P2S28D30CTP / P2S28D40CTP) 128M Double Data Rate Synchronous DRAM
|
MIRA
|
| UPD45128163G5-A80T-9JF UPD45128163G5-A10T-9JF UPD4 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
| HYS64T128022HM-3.7-A |
128M X 64 DDRAM MOD, 0.45 ns, DMA214
|
QIMONDA AG
|
| EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
|
Elpida Memory, Inc.
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
