| PART |
Description |
Maker |
| M5M4V64S40ATP-10L M5M4V64S40ATP-8 M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM) 8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM) 4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的 8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM) SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation Toshiba, Corp.
|
| HYM72V64M636BLF8-H HYM72V64M636BLF8-K HYM72V64M636 |
64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 SDRAM - SO DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| MC-4564EC726PFB-A80 |
64M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
|
Elpida Memory, Inc.
|
| M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYM72V64736BLT8-HP HYM72V64736BT8-HP HYM72V64736BT |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 SDRAM - Unbuffered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| HYB39S256407FF-7 |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54
|
Infineon Technologies AG
|
| HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
| 967598-1 |
MODU II PIN HEADER , 32 POS. MODU II Stiftwanne , 32 pol
|
Tyco Electronics
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp. NEC[NEC]
|